Process for fabricating a vertical static induction device

Details Process for fabricating a vertical static induction device Process for fabricating a vertical static induction device

1980-04-14

1982-10-05

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29580, 148174, 148187, 148188, 156628, 156657, 156662, 357 22, 357 54, 357 56, 357 59, H01L 21225, H01L 2972

Patent

active

043522386

ABSTRACT:
A method of fabricating a vertical static induction semiconductor device comprising depositing a polycrystalline silicon film on a single crystal silicon layer, and forming an insulating film comprised of silicon nitride on the polycrystalline film. The insulating film is selectively etched to form islands of the insulating film overlying areas where a gate region and a main electrode region of the semiconductor device are to be formed. An oxide film is formed on the surface regions exposed by etching, and the oxide film is used as a mask for controlling introduction of impurity atoms to form the gate region and the main electrode region.

REFERENCES:
patent: 3372067 (1968-03-01), Schafer
patent: 3676230 (1972-07-01), Rice
patent: 3740835 (1973-06-01), Duncan
patent: 3753807 (1973-08-01), Hoare et al.
patent: 3940288 (1976-02-01), Takagi et al.
patent: 4063967 (1977-12-01), Graul et al.
patent: 4127931 (1978-12-01), Shiba
patent: 4182023 (1980-01-01), Cohen et al.
patent: 4200878 (1980-04-01), Ipri

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