Double field oxidation process

Details Double field oxidation process Double field oxidation process

1981-07-24

1982-10-05

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576W, 29577C, 148187, H01L 2122

Patent

active

043522360

ABSTRACT:
A process for growing field oxide particularly for a dynamic memory is described. The process results in thinner field oxides in the storage array (2000-3000 A) and thicker oxides for the peripheral circuits (7000-8000 A). The thinner field oxide regions have smaller bird-beaks, reducing required substrate area. The plate for the storage nodes are coupled to ground potential, thus the thinner field oxides in the storage region provide sufficient isolation.

REFERENCES:
patent: 3996658 (1976-12-01), Takei et al.
patent: 4031608 (1977-06-01), Togei et al.
patent: 4164751 (1979-08-01), Tasch
patent: 4218267 (1980-08-01), Maddox
patent: 4258466 (1981-03-01), Kuo et al.
patent: 4282648 (1981-08-01), Yu et al.
patent: 4313253 (1982-02-01), Henderson
patent: 4319260 (1982-03-01), Tasch
patent: 4322881 (1982-04-01), Enomoto et al.
patent: 4326329 (1982-04-01), McElroy

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