Single mode vertical cavity surface emitting laser using...

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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Details

C372S045012, C372S043010, C372S098000, C372S099000, C372S102000

Reexamination Certificate

active

07668220

ABSTRACT:
Vertical cavity surface emitting lasers are disclosed, one example of which includes a substrate upon which a lower mirror layer is formed. An active region and upper mirror layer are disposed, in that order, on the lower mirror layer. In particular, the upper mirror layer includes a plurality of DBR layers formed on the active region. The upper mirror layer additionally includes a photonic crystal formed on the plurality of DBR layers and having a periodic structure that contributes to the definition of a central defect. As a consequence of this structure, the photonic crystal has a reflectivity that is wavelength dependent, and the central defect enables the VCSEL to propagate a single mode.

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