Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2009-04-14
2010-02-23
Fahmy, Wael (Department: 2814)
Coherent light generators
Particular active media
Semiconductor
C372S045012, C372S043010, C372S098000, C372S099000, C372S102000
Reexamination Certificate
active
07668220
ABSTRACT:
Vertical cavity surface emitting lasers are disclosed, one example of which includes a substrate upon which a lower mirror layer is formed. An active region and upper mirror layer are disposed, in that order, on the lower mirror layer. In particular, the upper mirror layer includes a plurality of DBR layers formed on the active region. The upper mirror layer additionally includes a photonic crystal formed on the plurality of DBR layers and having a periodic structure that contributes to the definition of a central defect. As a consequence of this structure, the photonic crystal has a reflectivity that is wavelength dependent, and the central defect enables the VCSEL to propagate a single mode.
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Deng Hongyu
Lenosky Thomas
Lipson Jan
Fahmy Wael
Finisar Corporation
Sayadian Hrayr A
Workman Nydegger
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