Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2010-02-02
2010-11-30
Pizarro, Marcos D (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE21575, C257SE21591, C257SE21592, C257SE23010, C257SE23019, C257SE23025, C438S618000, C438S660000, C438S783000, C438S917000
Reexamination Certificate
active
07843062
ABSTRACT:
An interconnect and method of making the interconnect. The method includes forming a dielectric layer on a substrate, the dielectric layer having a top surface and a bottom surface; forming a first wire and a second wire in the dielectric layer, the first wire separated from the second wire by a region of the dielectric layer; and forming metallic nanoparticles in or on the top surface of the dielectric layer between the first and second wires, the metallic nanoparticles capable of electrically connecting the first wire and the second wire only while the nanoparticles are heated to a temperature greater than room temperature and a voltage is applied between the first and second wires.
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Notice of Allowance (Mail Date Dec. 14, 2009) for U.S. Appl. No. 12/035,448, filed Feb. 22, 2008; Confirmation No. 1006.
Chen Fen
Christiansen Cathryn Jeanne
Shinosky Michael Anthony
Sullivan Timothy Dooling
Gupta Raj
International Business Machines - Corporation
Pizarro Marcos D
Schmeiser, Olsen & Watts; Richard M. Kotulak
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