Methods of forming zinc oxide based II-VI compound...

Details Methods of forming zinc oxide based II-VI compound... Methods of forming zinc oxide based II-VI compound...

2010-04-07

2010-11-09

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Having metal oxide or copper sulfide compound semiconductor...

Reexamination Certificate

active

07829376

ABSTRACT:
A p-type ZnO-based II-VI compound semiconductor layer has silver, potassium and/or gold dopants therein at a net p-type dopant concentration of greater than about 1×1017cm−3. A method of forming the layer includes using an atomic layer deposition (ALD) technique. This technique includes exposing a substrate to a combination of gases: a first reaction gas containing zinc at a concentration that is repeatedly transitioned between at least two concentration levels during a processing time interval, a second reaction gas containing oxygen and a p-type dopant gas containing at least one p-type dopant species selected from a group consisting of silver, potassium and gold. A concentration of oxygen in the second reaction gas may also be repeatedly transitioned between at least two concentration levels. The concentration of zinc in the first reaction gas and the concentration of oxygen in the second reaction gas may be transitioned in an alternating sequence, so that relatively high zinc concentrations in the first reaction gas overlap with relatively low oxygen concentrations in the second reaction gas and vice versa.

REFERENCES:
patent: 4272754 (1981-06-01), Lou
patent: 4358950 (1982-11-01), Chang
patent: 4358951 (1982-11-01), Chang
patent: 4568397 (1986-02-01), Hoke et al.
patent: 4612411 (1986-09-01), Wieting et al.
patent: 4876984 (1989-10-01), Kinoshita et al.
patent: 4881979 (1989-11-01), Lewis
patent: 5141564 (1992-08-01), Chen et al.
patent: 5157136 (1992-10-01), Arnold et al.
patent: 5369290 (1994-11-01), Kawasaki et al.
patent: 5393444 (1995-02-01), Asai
patent: 5413959 (1995-05-01), Yamamoto et al.
patent: 5458085 (1995-10-01), Kondo et al.
patent: 5468678 (1995-11-01), Nakamura et al.
patent: 5545443 (1996-08-01), Yamada
patent: 5574296 (1996-11-01), Park et al.
patent: 5603778 (1997-02-01), Sonoda
patent: 5668395 (1997-09-01), Razeghi
patent: 5769963 (1998-06-01), Fujioka et al.
patent: 5804466 (1998-09-01), Arao et al.
patent: 5863326 (1999-01-01), Nause et al.
patent: 5882805 (1999-03-01), Higa et al.
patent: 5897332 (1999-04-01), Hori et al.
patent: 5900060 (1999-05-01), Nause et al.
patent: 6045626 (2000-04-01), Yano et al.
patent: 6057561 (2000-05-01), Kawasaki et al.
patent: 6147747 (2000-11-01), Kavaya et al.
patent: 6181723 (2001-01-01), Okubo et al.
patent: 6261862 (2001-07-01), Hori et al.
patent: 6291085 (2001-09-01), White et al.
patent: 6329216 (2001-12-01), Matsumoto et al.
patent: 6342313 (2002-01-01), White et al.
patent: 6407405 (2002-06-01), Sano et al.
patent: 6410162 (2002-06-01), White et al.
patent: 6472241 (2002-10-01), Iwata et al.
patent: 6475825 (2002-11-01), White et al.
patent: 6479801 (2002-11-01), Shigeoka et al.
patent: 6491884 (2002-12-01), Faller et al.
patent: 6506994 (2003-01-01), Wang et al.
patent: 6509555 (2003-01-01), Riess et al.
patent: 6521550 (2003-02-01), Tanabe et al.
patent: 6524428 (2003-02-01), Tamura et al.
patent: 6527858 (2003-03-01), Yoshida et al.
patent: 6528431 (2003-03-01), Tanabe et al.
patent: 6531408 (2003-03-01), Iwata et al.
patent: 6559736 (2003-05-01), Lu et al.
patent: 6606333 (2003-08-01), Kadota
patent: 6620709 (2003-09-01), Kapolnek et al.
patent: 6621192 (2003-09-01), Lu et al.
patent: 6624441 (2003-09-01), Cantwell et al.
patent: 6673478 (2004-01-01), Kato et al.
patent: 6733895 (2004-05-01), Kadota et al.
patent: 6815736 (2004-11-01), Mascarenhas
patent: 6841000 (2005-01-01), McCandish
patent: 6852623 (2005-02-01), Park et al.
patent: 6876009 (2005-04-01), Narukawa et al.
patent: 6887736 (2005-05-01), Nause et al.
patent: 6896731 (2005-05-01), Yamamoto et al.
patent: 6908782 (2005-06-01), Yan et al.
patent: 6936101 (2005-08-01), Nause et al.
patent: 7105868 (2006-09-01), Nause et al.
patent: 7122827 (2006-10-01), Alizadeh et al.
patent: 7132691 (2006-11-01), Tanabe et al.
patent: 7176054 (2007-02-01), Nause et al.
patent: 2002/0028571 (2002-03-01), Cheung
patent: 2003/0011047 (2003-01-01), Cunningham et al.
patent: 2003/0064541 (2003-04-01), Kadota et al.
patent: 2004/0094085 (2004-05-01), White et al.
patent: 2005/0012107 (2005-01-01), Shei et al.
patent: 2005/0020035 (2005-01-01), Nause et al.
patent: 2005/0170971 (2005-08-01), Yata et al.
patent: 2005/0285138 (2005-12-01), Burgener, II et al.
patent: 2006/0124051 (2006-06-01), Yoshioka et al.
patent: 2006/0124943 (2006-06-01), Li et al.
patent: 2006/0131599 (2006-06-01), Slater, Jr. et al.
patent: 2006/0233969 (2006-10-01), White et al.
patent: 2007/0006802 (2007-01-01), Nause et al.
patent: 2007/0111372 (2007-05-01), Nause et al.
patent: 2007/0126021 (2007-06-01), Ryu et al.
patent: 2007/0218703 (2007-09-01), Kaeding et al.
patent: 2010/0032008 (2010-02-01), Adekore
patent: 2004-214405 (2004-07-01), None
patent: 2004-349584 (2004-12-01), None
patent: WO 2006/119927 (2006-11-01), None
patent: WO 2007/034864 (2007-03-01), None
patent: WO 2008/073469 (2008-06-01), None
Amano et al. “Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AIN buffer layer”Appl. Phys. Lett.48(5):3535-355 (1986).
Goodings et al. “A New Inlet Area Design for Horizontal MOVPE Reactors”Journal of Crystal Growth96:13-18 (1989).
Gorla et al. “Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (0112) sapphire by metalorganic chemical vapor deposition”Journal of Applied Physics85(5):2595-2602 (1999).
Haga et al. “Group III impurity doped ZnO films prepared by atmospheric pressure chemical-vapor deposition using zinc acetylacetonate and oxygen”Applied Surface Science169-170:504-507 (2001).
Hashimoto et al. Effects of Hydrogen in an Ambient on the Crystal Growth of GaN Using Ga(CH3)3and NH3Journal of Crystal Growth68:163-168 (1984).
Hiramatsu et al. “Transparent conducting ZnO thin films prepared by XeCl excimer laser ablation”J. Vac. Sci. Technol. A16(2):669-673 (1998).
Hu et al. “Atmospheric pressure chemical vapor deposition of gallium doped zinc oxide thin films from diethyl zinc, water, and triethyl gallium”J. Appl. Phys.72(11):5381-5392 (1992).
Kim et al. “Epitaxial growth of Al-doped ZnO thin films grown by pulsed laser deposition”Thin Solid Films420-421:107-111 (2002.
Li et al. “Transparent and conductive Ga-doped ZnO films grown by low pressure metal organic chemical vapor deposition”J. Vac. Sci. Technol. A15(3):1063-1068 (1997).
Liu et al. “Ultraviolet Detectors Based on Epitaxial ZnO Films Grown by MOCVD”Journal of Electronic Materials29(1):69-74 (2000).
Lorenz et al. “Optical and electrical properties of epitaxial (Mg,Cd)xZn1-xO, ZnO), and ZnO1-xGa,Al) thin films onc-plane sapphire grown by pulsed laser deposition”Solid-State Electyronics47:2205-2209 (2003).
Minegishi et al. “Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition”Jpn. J. Appl. Phys. 36:L 1453-L 1455 (1997).
Ohashi et al. “Band-edge emission of undoped and doped ZnO single crystals at room temperature”Journal of Applied Physics91(6):3658-3663 (2002).
Ryu et al. “Fabrication of homostructural ZnO p-n junctions”Journal of Crystal Growth219:419-422 (2000).
Tompa et al. “Metal Organic Chemical Vapor Depositions of Oxide Films for Advanced Applications”Transparent Conductive Oxides1-12 (2000).
Tsurumi et al. “Electric Properties of Zinc Oxide Epitaxial Films Grown by Ion-Beam Sputtering with Oxygen-Radical Irradiation”Jpn. J. Appl. Phys.38:3682-3688 (1999).
Wang et al. “Nitrogen doped ZnO film grown by the plasma-assisted metal-organic chemical vapor deposition”Journal of Crystal Growth226:123-129 (2001).
Woelk et al. “A Novel NOVPE Reactor with a Rotating substrate”Journal of Crystal Growth93:216-219 (1988).
Yamamoto et al “Solution Using a Codoping Method toUnipolarityfor the Fabrication ofp-Type ZnO”Jpn. J. Appl. Phys.38:L166-L169 (1999).
Zembutsu et al. “Growth of GaN single crystal films using electron cyclotron resonance plasma excited metalorganic vapor phase epitax

Affiliated with

Also associated with

Rating

Methods of forming zinc oxide based II-VI compound... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming zinc oxide based II-VI compound..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming zinc oxide based II-VI compound... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4183122