Method of forming a carbon-containing material

Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of coating supply or source outside of primary...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C427S256000, C428S408000

Reexamination Certificate

active

07824741

ABSTRACT:
A method includes forming ionic clusters of carbon-containing molecules, which molecules have carbon-carbon sp2bonds, and accelerating the clusters. A surface of a substrate is irradiated with the clusters. A material is formed on the surface using the carbon from the molecules. The material includes carbon and may optionally include hydrogen. The material may include graphene. The material may form a monolayer. The molecules may include one or more material selected from the group consisting of graphene, carbon allotropes, ethylene, and hydrocarbon molecules containing ethylenic moieties. A fused region may be formed in the substrate as an interface between the substrate and the material. The clusters may have diameters of at least 20 nanometer s and may be accelerated to an energy of at least 0.5 keV.

REFERENCES:
patent: 6498107 (2002-12-01), Fenner
patent: 6797339 (2004-09-01), Akizuki et al.
patent: 7208191 (2007-04-01), Freedman
patent: 2003/0026990 (2003-02-01), Yamada et al.
patent: 2005/0163985 (2005-07-01), Dorfman
patent: 2005/0271574 (2005-12-01), Jang et al.
patent: 2005/0277246 (2005-12-01), Kirkpatrick et al.
patent: 2006/0177594 (2006-08-01), Nickel
patent: 2006/0261419 (2006-11-01), Kreupl et al.
patent: 2006/0292762 (2006-12-01), Borland et al.
patent: 2007/0053168 (2007-03-01), Sayir et al.
patent: 2007/0290287 (2007-12-01), Freedman
patent: 2008/0245974 (2008-10-01), Kirkpatrick et al.
patent: 2850400 (2003-01-01), None
patent: 60-72217 (1985-04-01), None
patent: 62-75545 (1987-04-01), None
patent: 8-127867 (1996-05-01), None
patent: 2003-13208 (2003-01-01), None
patent: 2003-95627 (2003-04-01), None
patent: 2003-96555 (2003-04-01), None
patent: 2004043874 (2004-02-01), None
patent: 2005-169816 (2005-06-01), None
patent: 2005-169816 (2005-06-01), None
patent: WO 026431 (2000-05-01), None
patent: WO 01/83238 (2001-11-01), None
patent: WO 2007/002130 (2007-01-01), None
MacCrimmon, R., et al. “Gas cluster ion beam infusion processing of semiconductors” Nuclear Instrumetns and Methods in Physics, Research B, Sep. 21, 2005 pp. 427-430.
Orlowski, Marius “CMOS Challenges of Keeping up with Moore's Law” 13thInternationl Conference on Advanced Thermal Processing of Semiconductors—RTP Oct. 4, 2005 pp. 3-21.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of forming a carbon-containing material does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a carbon-containing material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a carbon-containing material will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4182093

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.