Semiconductor power module with SiC power diodes and method...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices

Reexamination Certificate

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C257S177000, C257S723000, C257S728000, C257SE23044

Reexamination Certificate

active

07737551

ABSTRACT:
A semiconductor power module has at least one power semiconductor chip (2) which can be controlled by the field effect and has a plurality of fail-safe, small-area SiC power diodes (D1to D8). The function of a large-area SiC power diode chip which is susceptible to failure is distributed over these small-area, parallel-connected SiC power diode chips (D1to D8) in such a way that their total area of active SiC diode areas (F1to F8) corresponds to an area extent of a large-area non-fail-safe SiC power diode chip.

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