Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Reexamination Certificate
2006-07-03
2010-06-15
Lee, Eugene (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
C257S177000, C257S723000, C257S728000, C257SE23044
Reexamination Certificate
active
07737551
ABSTRACT:
A semiconductor power module has at least one power semiconductor chip (2) which can be controlled by the field effect and has a plurality of fail-safe, small-area SiC power diodes (D1to D8). The function of a large-area SiC power diode chip which is susceptible to failure is distributed over these small-area, parallel-connected SiC power diode chips (D1to D8) in such a way that their total area of active SiC diode areas (F1to F8) corresponds to an area extent of a large-area non-fail-safe SiC power diode chip.
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Banner & Witcoff , Ltd.
Gumedzoe Peniel M
Infineon - Technologies AG
Lee Eugene
LandOfFree
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