Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2009-05-08
2010-10-05
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S759000
Reexamination Certificate
active
07808107
ABSTRACT:
Circuit elements and wirings constituting a circuit, and first electrodes electrically connected to such a circuit are provided on one main surface of a semiconductor substrate. An organic insulating film is formed on the circuit except for openings on the surfaces of the first electrodes. First and second external connecting electrodes are provided on the organic insulating film. At least one conductive layer for electrically connecting the first and second external connecting electrodes and the first electrodes is placed on the organic insulating film.
REFERENCES:
patent: 4508749 (1985-04-01), Brannon et al.
patent: 4916520 (1990-04-01), Kurashima
patent: 5547740 (1996-08-01), Higdon et al.
patent: 5593926 (1997-01-01), Fujihira
patent: 5892288 (1999-04-01), Muraki et al.
patent: 5994766 (1999-11-01), Shenoy et al.
patent: 6030890 (2000-02-01), Iwabuchi
patent: 6177731 (2001-01-01), Ishida et al.
patent: 6266283 (2001-07-01), Fujimori
patent: 6452256 (2002-09-01), Kazama et al.
patent: 6498396 (2002-12-01), Arimoto
patent: 6680992 (2004-01-01), Morikawa et al.
patent: 196 10 302 (1996-03-01), None
patent: 05-218042 (1992-02-01), None
patent: 8-31982 (1994-07-01), None
patent: 08-250498 (1995-03-01), None
patent: 08-237091 (1995-11-01), None
patent: 9-107048 (1996-02-01), None
patent: 10-335567 (1997-05-01), None
patent: 2000-195263 (1998-12-01), None
patent: 2000-252418 (1999-02-01), None
patent: 2001-156209 (1999-11-01), None
patent: 2001-257310 (2000-03-01), None
patent: 2002-57292 (2000-08-01), None
The Office Action issued by the Patent Office of the People's Republic of China dated May 30, 2008 regarding an Application No. 01815004.7 in Chinese language (English translation included).
Akioka Takashi
Asari Sanae
Kohara Yutaka
Miyata Shusaku
Nakazato Shinji
A. Marquez, Esq. Juan Carlos
Hitachi ULSI Systems Co. Ltd.
Menz Douglas M
Renesas Electronics Corporation
Stites & Harbison PLLC
LandOfFree
Semiconductor integrated circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor integrated circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4181823