Method for manufacturing a semiconductor integrated circuit incl

Metal working – Method of mechanical manufacture – Assembling or joining

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29577, 29578, 29580, 357 41, B01J 1700

Patent

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040116530

ABSTRACT:
A method for manufacturing a semiconductor integrated circuit having insulating gate type semiconductor transistors and protective insulators formed on one side of a semiconductor substrate, the semiconductor elements being connected to each other through electrodes mounted on said protective insulators, wherein those portions of the surface of the substrate which are positioned right under said electrodes are further provided with layers having the same conductivity type as, but higher concentrations of impurities than, said substrate in order to prevent the occurrence of parasitic MOS and in consequence current leakage across said transistors.

REFERENCES:
patent: 3475234 (1969-10-01), Kerwin
patent: 3504430 (1970-04-01), Kubo
patent: 3550256 (1970-12-01), Deal
patent: 3752711 (1973-08-01), Kooi

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