Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2008-01-31
2010-10-12
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
C257SE21228
Reexamination Certificate
active
07811936
ABSTRACT:
A method produces a semiconductor device having an interconnection structure disposed above a substrate, wherein the interconnection structure has an interconnection and an insulator layer including a low-permittivity layer. The method includes an etching step forming openings in the insulator layer to expose a surface of the interconnection by dry etching, a cleaning step cleaning the surface of the interconnection and the openings in the insulator layer, and a forming step forming another interconnection by filling a conductor material into the openings. The cleaning step includes a first cleaning process using a cleaning liquid, a rinsing process using a rinsing liquid including water and carbonic acid or organic acid, and a second cleaning process using a neutral or alkaline hydrogen aqueous solution that is supplied to the surface of the interconnection and the openings in the insulator layer.
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Coleman W. David
Enad Christine
Fujitsu Semiconductor Limited
Westerman Hattori Daniels & Adrian LLP
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