Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2005-05-20

2010-02-16

Smith, Zandra V. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE21476, C257SE23010, C257S758000, C438S608000

Reexamination Certificate

active

07663239

ABSTRACT:
In a semiconductor device including: an insulating film (6) formed over a substrate (1); a buried metal interconnect (10) formed in the insulating film (6); and a barrier metal film (A1) formed between the insulating film (6) and the metal interconnect (10), the barrier metal film (A1) includes a metal oxide film (7), a metal compound film (8) and a metal film (9) stacked in this order from a side in which the insulating film (6) exists to a side in which the metal interconnect (10) exists. Elastic modulus of the metal compound film (8) is larger than that of the metal oxide film (7).

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