Semiconductor integrated circuit including metal mesh structure

Details Semiconductor integrated circuit including metal mesh structure Semiconductor integrated circuit including metal mesh structure

2004-12-16

2010-06-22

Malsawma, Lex (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S659000, C257S758000, C257SE23151, C257SE23175, C257SE21575, C438S622000

Reexamination Certificate

active

07741696

ABSTRACT:
A metal mesh structure for use in an integrated circuit is described. In one embodiment, a semiconductor integrated circuit includes a first region including, for example, a device layer having one or more active semiconductor devices. The circuit also includes a second region, which may include a metalization layer including circuit wires. The circuit further includes a layer of metal mesh interposed between the first and second regions, and which may be implemented on at least a portion of another metalization layer.

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Written Opinion of the International Searching Authority, International Application No. PCT/US2005/016549, mailed Nov. 23, 2006.

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