Phase change memory with U-shaped chalcogenide cell

Details Phase change memory with U-shaped chalcogenide cell Phase change memory with U-shaped chalcogenide cell

2005-07-20

2010-02-02

Monbleau, Davienne (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S049000, C257S052000, C257SE29105, C257SE45002, C365S148000

Reexamination Certificate

active

07655938

ABSTRACT:
A phase change memory may be made of a chalcogenide material having a U-shape. The U-shaped chalcogenide may transition between amorphous and crystalline phases in an upper part of a vertical portion thereof. As a result, in some embodiments, self-heating may be achieved without the need for a heater, and without the need for glue in some cases.

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