Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area
Reexamination Certificate
2006-07-05
2010-06-08
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With enlarged emitter area
C257S581000, C257S582000
Reexamination Certificate
active
07732896
ABSTRACT:
A semiconductor apparatus comprises a plurality of transistor devices including a control terminal being inputted with a control signal and a first and a second terminals that a current flows therein according to the control signal, and a plurality of substrate conductive portions each formed in a region different from a region where the plurality of transistor devices are formed therein, wherein the transistor devices are connected to the substrate conductive portions, and each of the substrate conductive portion includes a semiconductor layer separated from other substrate conductive portions.
REFERENCES:
patent: 6225867 (2001-05-01), Ilowski et al.
patent: 6329259 (2001-12-01), Johansson
patent: 6717188 (2004-04-01), Aoki
patent: 2002/0186068 (2002-12-01), Voldman et al.
patent: 2003/0227071 (2003-12-01), Chen
patent: 2004/0195644 (2004-10-01), Mallikarjunaswamy et al.
patent: 2004-128142 (2004-04-01), None
patent: 2004128142 (2004-04-01), None
Machine Translation of JP2004-128142.
Machine translation of JP2004128142 is attached.
Jahan Bilkis
Louie Wai-Sing
McGinn IP Law Group PLLC
NEC Electronics Corporation
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