Silicon-on insulator substrate and method for manufacturing...

Details Silicon-on insulator substrate and method for manufacturing... Silicon-on insulator substrate and method for manufacturing...

2005-05-25

2010-06-15

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S455000, C438S458000, C438S479000, C438S528000

Reexamination Certificate

active

07736998

ABSTRACT:
This SOI substrate includes a base substrate which includes a single-crystal semiconductor and an active layer which includes a single-crystal semiconductor and is bonded to the base substrate with an oxide film therebetween. The oxide film is formed only in the active layer. The active layer is formed with a thickness of 10 to 200 nm and a thickness variation throughout the active layer of 1.5 nm or less by etching a surface of the active layer while selectively using only the reactive radicals generated by a plasma etching process.

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