Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2007-04-20
2010-12-28
Such, Matthew W (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C438S099000, C257SE51006
Reexamination Certificate
active
07858969
ABSTRACT:
An organic thin film transistor including a substrate, a gate, a gate insulator, an adhesive layer, a metal nano-particle layer and an organic semiconductor layer is provided. The gate is disposed on the substrate. The gate insulator is disposed on the gate and the substrate. The adhesive layer is disposed on the gate insulator. Besides, the adhesive layer has a hydrophobic surface above the gate and a first hydrophilic surface and a second hydrophilic surface on two sides of the hydrophobic surface. A surface of the metal nano-particle layer is modified by a hydrophilic group, and the metal nano-particle layer is disposed on the first and the second hydrophilic surfaces of the adhesive layer as a source and a drain, respectively. The organic semiconductor layer is disposed on the hydrophobic surface of the adhesive layer and on the metal nano-particle layer.
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Lai Chin-Chuan
Tsai Yi-Yun
Wu Chuan-Yi
Chunghwa Picture Tubes Ltd.
Jianq Chyun IP Office
Such Matthew W
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