Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-10-17
2010-06-15
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S440000, C257SE21128, C257SE31057
Reexamination Certificate
active
07737517
ABSTRACT:
A display device includes a pixel including: a gate line; a gate insulating film; a substrate; a data line; a pixel electrode; a semiconductor layer formed on the gate line and the gate insulating film; a protective film formed on the data line, the pixel electrode, and the semiconductor layer; and a thin film transistor. A portion of the gate line also serves as a gate electrode of the thin film transistor. A portion of the data line also serves as a drain electrode of the thin film transistor. A portion of the pixel electrode also serves as a source electrode of the thin film transistor. The semiconductor layer is formed of an oxide semiconductor layer. The oxide semiconductor layer is directly connected to the drain electrode and the source electrode, and the data line and the pixel electrode are formed of different conductive films.
REFERENCES:
patent: 6518676 (2003-02-01), Chikama et al.
patent: 2005/0275038 (2005-12-01), Shih et al.
patent: 2004-349583 (2004-12-01), None
Hatano Mutsuko
Kawamura Tetsufumi
Sato Takeshi
Antonelli, Terry Stout & Kraus, LLP.
Hitachi Displays Ltd.
Liu Benjamin Tzu-Hung
Ngo Ngan
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