Monolithic white and full-color light emitting diodes using...

Details Monolithic white and full-color light emitting diodes using... Monolithic white and full-color light emitting diodes using...

2008-12-17

2010-12-14

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Making emissive array

C257S014000, C257SE21404, C257SE33008

Reexamination Certificate

active

07851242

ABSTRACT:
An embodiment is a method and apparatus for a white or full-color light-emitting diode. First single or multiple quantum wells (QWs) at a first wavelength are formed at an active region between a p-type layer and an n-type layer of a light-emitting diode. Multiple passive quantum wells (QWs) are formed within the p-type layer or the n-type layer. The multiple passive QWs are optically pumped by the first or single multiple QWs to generate a desired color.

REFERENCES:
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T. Shioda, et al. “GaN Selective Area Metal-Organic Vapor Phase Epitaxy: Prediction of Growth Rate Enhancement by Vapor Phase Diffusion Model”, Jpn. J. of Appl. Phys. vol. 46, No. 43, pp. L1045-L1047, 2007.

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