Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2008-12-04
2010-10-12
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C257SE21099
Reexamination Certificate
active
07811902
ABSTRACT:
A method for manufacturing a nitride based single crystal substrate and a method for manufacturing a nitride based light emitting diode using the same. The method for manufacturing the nitride based single crystal substrate includes forming a ZnO layer on a base substrate; forming a low-temperature nitride buffer layer on the ZnO layer using dimethyl hydragine (DMHy) as an N source; growing a nitride single crystal on the low-temperature nitride buffer layer; and separating the nitride single crystal from the base substrate by chemically eliminating the ZnO layer.
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Landau Matthew C
Luke Daniel
Samsung Electro-Mechanics Co. Ltd.
Volpe and Koenig P.C.
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