Semiconductor film formation device

Coating apparatus – Gas or vapor deposition

Reexamination Certificate

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Details

C118S641000, C118S069000, C156S345270, C156S345520

Reexamination Certificate

active

07740703

ABSTRACT:
A semiconductor film formation device has: a reaction vessel that includes a gas flow path to allow source gas to pass through and a substrate mount site provided in the gas flow path to mount a substrate; a temperature control means that is disposed opposite to the substrate mount site and close to the reaction vessel to control the internal temperature of the reaction vessel; and a thermal conductivity adjusting member that is disposed between the reaction vessel and the temperature control means. The thermal conductivity adjusting member has a section with a thermal conductivity different from the other section along the gas flow path.

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Machine Translation of JP 06010142 A.

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