Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2009-05-12
2010-10-12
Sefer, A. (Department: 2893)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S387000, C257SE21546, C257SE21548, C257SE21645
Reexamination Certificate
active
07811895
ABSTRACT:
A stacked capacitor in a memory cell has a bottom electrode made of a metal or metal compound, a capacitor insulation film and a top electrode made of a metal or a metal compound. The capacitor insulation film includes an aluminum oxide film having a thickness of 2 to 4 nm and in contact with the bottom electrode, and an overlying hafnium oxide film having a thickness of 3 to 6 nm. The stacked capacitor has a higher resistance against a biased temperature test.
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Japanese Patent Office issued a Japanese Office Action dated Jan. 7, 2010, Application No. 2004-330715.
Elpida Memory Inc.
Sefer A.
Young & Thompson
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