Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-12-27
2010-02-16
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
Reexamination Certificate
active
07663932
ABSTRACT:
A nonvolatile semiconductor memory device capable of reading and verifying a negative threshold cell by biasing a source line and a well line to a positive voltage. The nonvolatile semiconductor memory device includes a precharge circuit which precharges a bit line to the same voltage as that of the source line in reading and verifying the negative threshold cell.
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Hamada Makoto
Maejima Hiroshi
Ho Hoai V
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tran Anthan T
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