Nonvolatile semiconductor memory device

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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Details

Type

Reexamination Certificate

Status

active

Patent number

07663932

Description

ABSTRACT:
A nonvolatile semiconductor memory device capable of reading and verifying a negative threshold cell by biasing a source line and a well line to a positive voltage. The nonvolatile semiconductor memory device includes a precharge circuit which precharges a bit line to the same voltage as that of the source line in reading and verifying the negative threshold cell.

REFERENCES:
patent: 6522583 (2003-02-01), Kanda et al.
patent: 2004/0105316 (2004-06-01), Yang et al.
patent: 2005/0174868 (2005-08-01), Anzai et al.
patent: 2007/0274129 (2007-11-01), Terasawa et al.
patent: 2006-85839 (2006-03-01), None
U.S. Appl. No. 12/211,947, filed Sep. 17, 2008, Nishihara, et al.

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