Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2005-10-18
2010-11-30
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S225000, C257S233000, C257SE27133
Reexamination Certificate
active
07842978
ABSTRACT:
An n-type region as a charge storage region of a photodiode is buried in a substrate. The interface between silicon and a silicon oxide film is covered with a high concentration p-layer and a lower concentration p-layer is formed only in the portion immediately below a floating electrode for signal extraction. Electrons generated by light are stored in the charge storage region, thereby changing the potential of the portion of the p-layer at the surface of the semiconductor region. The change is transmitted through a thin insulating film to the floating electrode by capacitive coupling and read out by a buffer transistor. Initialization of charges is executed by adding a positive high voltage to the gate electrode of a first transfer transistor such that the electrons stored in the charge storage region are transferred to the n+region and generation of reset noise is protected.
REFERENCES:
patent: 4974043 (1990-11-01), Stevens
patent: 5043783 (1991-08-01), Matsumoto et al.
patent: 5977576 (1999-11-01), Hamasaki
patent: 6188093 (2001-02-01), Isogai et al.
patent: 2005/0269606 (2005-12-01), Mouli
patent: 2006/0103747 (2006-05-01), Rhodes
patent: 2006/0255382 (2006-11-01), Rhodes
patent: 6 13597 (1994-01-01), None
patent: 8 214218 (1996-08-01), None
patent: 8 335688 (1996-12-01), None
patent: 10 209422 (1998-08-01), None
patent: 2000 312024 (2000-11-01), None
U.S. Appl. No. 12/516,635, filed May 28, 2009, Kawahito.
U.S. Appl. No. 12/065,156, filed Feb. 28, 2008, Kawahito, et al.
U.S. Appl. No. 12/065,158, filed Feb. 28, 2008, Kawahito, et al.
Lee Eugene
National University Corporation Shizuoka University
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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