Integrated circuit comprising at least one capacitor and...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257SE27048

Reexamination Certificate

active

07667292

ABSTRACT:
An integrated circuit includes at least one capacitor that is formed on a layer provided with at least one first trench. The capacitor, which is provided with a dielectric layer that separates two electrodes, conforms to the shape of the first trench, but leaves a part of the first trench unfilled. A material capable of absorbing stresses associated with the displacements of the walls of the trench is placed in the trench to fill the part of the first trench. A second trench is formed at least partly surrounding the first trench. This second trench is also at least partly filled with a material capable of absorbing stresses associated with the displacements of the walls of the second trench. A void may be included in the stress absorbing material which fills either of the first or second trenches.

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patent: 2004/0245558 (2004-12-01), Manger
Preliminary Search Report, FR 05 04536, dated Dec. 14, 2005.

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