Transistor arrangement, integrated circuit and method for...

Details Transistor arrangement, integrated circuit and method for... Transistor arrangement, integrated circuit and method for...

2004-09-01

2010-06-08

Pert, Evan (Department: 2826)

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Compensation for variations in external physical values

C327S379000, C327S389000

Reexamination Certificate

active

07733156

ABSTRACT:
The transistor arrangement contains a first and a second field effect transistor comprising a first and a second source drain connection and a control connection for applying a first or a second signal. The two field effect transistors are of the same conductive type. The transistor arrangement is configured in such a manner that the first signal can be applied in an alternating manner to the control connection of the first field effect transistor and the second signal can be applied in a simultaneous manner to the control connection of the second field effect transistor, and/or the second signal can be applied to the control connection of the first field effect transistor and the first signal can be applied simultaneously to the control connection of the second field effect transistor.

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Chinese Office Action for Application No. 200480032739.5 mailed Jun. 27, 2008 (4 pgs.).
A translation of Chinese Office Action for Application No. 200480032739.5 mailed Jun. 27, 2008 (7 pgs.).

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