Stepped substrate semiconductor laser for emitting light at slan

Details Stepped substrate semiconductor laser for emitting light at slan Stepped substrate semiconductor laser for emitting light at slan

1997-03-19

1998-08-25

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

057990271

ABSTRACT:
In a slant plane light emission type semiconductor laser whose laser structure can be formed on a stepped substrate by a series of MOCVD growth processes, the width of the active layer at the slant portion is set to 2.5 .mu.m or less or the angle between the flat portion and slant portion is set to 12 degrees or less. The semiconductor laser having such a structure can emit light having a single peak at the near field.

REFERENCES:
patent: 5065200 (1991-11-01), Bhat et al.
patent: 5375136 (1994-12-01), Anayama et al.
patent: 5621748 (1997-04-01), Kondo et al.
Journal of Crystal Growth, vol. 107 (1991) 1 Jan., Nos. 1/4, Amsterdam, NL "Orientation dependence of S, Zn, Si, Te, and Sn doping in OMCVD growth of InP and GaAs: application to DH lasers and lateral p-n junction arrays grown on non-planar substrates", pp. 772-778.
Journal of Quantum Mechanics, vol. QE-17, Jun. 1981, No. 6,; New York USA, pp. 1009-1013, Ga.sub.x In.sub.1-x As.sub.y P.sub.1-y /InP Terraced Substrate Single-Mode Laser.
Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials, Tsukuoa, 1992, pp. 619-621, "One-Step-MOVPE-Grown Index-Guide GaInP/AlGaInP Visible Laser Simultaneous Impurity Doping" (no month available).
Bhat et al., "Orientation Dependence of S, Zn, Si, Te, and Sn Doping in OMCVD growth of InP and GaAs", Journal of Crystal Growth pp. 772-778., Jan. 1, 1991.

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