Fabricating method for quantum dot of active layer of LED by...

Details Fabricating method for quantum dot of active layer of LED by... Fabricating method for quantum dot of active layer of LED by...

2008-06-27

2010-02-09

Sefer, A. (Department: 2893)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Making emissive array

C438S674000, C438S962000, C977S762000, C977S771000, C977S774000, C257SE21398, C257SE21582, C257SE21090

Reexamination Certificate

active

07659129

ABSTRACT:
The present invention is to provide a “fabricating method for quantum dot active layer of LED by nano-lithography” for fabricating out a new active layer of LED of nano quantum dot structure in more miniature manner than that of the current fabricating facilities to have high quality LED with features in longer light wavelength, brighter luminance and lower forward bias voltage by directly using the current fabricating facilities without any alteration or redesign of the precision.

REFERENCES:
patent: 2003/0044529 (2003-03-01), Wu et al.
patent: 2004/0150311 (2004-08-01), Jin
patent: 2006/0163560 (2006-07-01), Choi

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