Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2008-03-07
2010-10-05
Dickey, Thomas L (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C343S873000, C257SE21002
Reexamination Certificate
active
07808098
ABSTRACT:
The present invention provides a semiconductor device which is not easily damaged by external local pressure. The present invention further provides a manufacturing method of a highly-reliable semiconductor device, which is not destroyed by external local pressure, with a high yield. A structure body, in which high-strength fiber of an organic compound or an inorganic compound is impregnated with an organic resin, is provided over an element substrate having a semiconductor element formed using a single crystal semiconductor region, and heating and pressure bonding are performed, whereby a semiconductor device is manufactured, to which the element substrate and the structure body in which the high-strength fiber of an organic compound or an inorganic compound is impregnated with the organic resin are fixed together.
REFERENCES:
patent: 5075166 (1991-12-01), Sikorski et al.
patent: 5597631 (1997-01-01), Furumoto et al.
patent: 5770313 (1998-06-01), Furumoto et al.
patent: 5888609 (1999-03-01), Karttunen et al.
patent: 6224965 (2001-05-01), Haas et al.
patent: 6403221 (2002-06-01), Nakamura et al.
patent: 6530147 (2003-03-01), Haas et al.
patent: 6805958 (2004-10-01), Nakamura et al.
patent: 7049178 (2006-05-01), Kim et al.
patent: 7061083 (2006-06-01), Usami et al.
patent: 7485489 (2009-02-01), Bjorbell
patent: 2004/0016118 (2004-01-01), Haas et al.
patent: 2005/0233122 (2005-10-01), Nishimura et al.
patent: 2007/0020932 (2007-01-01), Maruyama et al.
patent: 2007/0278563 (2007-12-01), Takano et al.
patent: 2008/0012126 (2008-01-01), Dozen et al.
patent: 1092739 (2001-04-01), None
patent: 1589797 (2005-10-01), None
patent: 05-190582 (1993-07-01), None
patent: 07-007246 (1995-01-01), None
patent: 10-092980 (1998-04-01), None
patent: 2004-078991 (2004-03-01), None
patent: 2004-362341 (2004-12-01), None
patent: WO-01/01740 (2001-01-01), None
patent: WO-04/001848 (2003-12-01), None
Search Report (Application No. 08003900.1) Dated Apr. 8, 2009.
Dozen Yoshitaka
Ohtani Hisashi
Sugiyama Eiji
Tsurume Takuya
Dickey Thomas L
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Yushin Nikolay
LandOfFree
Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4157447