Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-09-29
2010-02-23
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE23114, C257SE23149
Reexamination Certificate
active
07667290
ABSTRACT:
The present invention provides a semiconductor device comprising: a substrate; a first insulating film formed on a principal surface of the substrate; a second insulating film formed on the first insulating film; a plurality of fuses formed on the second insulating film; and a blocking layer disposed in the first and second insulating films, the blocking layer being formed of a material capable of reflecting laser light irradiated to blow the plurality of fuses. The blocking layer overlaps a region in which the plurality of fuses are formed when viewed from the principal surface of the substrate. The plurality of fuses may be each formed in two or more insulating film layers laminated to one another on the second insulating film.
REFERENCES:
patent: 7215001 (2007-05-01), Kajita
patent: 2002/0063305 (2002-05-01), Koike
patent: 2004/0080022 (2004-04-01), Ido et al.
patent: 62-85442 (1987-04-01), None
patent: 2002-134616 (2002-05-01), None
Ido Yasuhiro
Iwamoto Takeshi
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Renesas Technology Corp.
Warren Matthew E
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