Phase shift mask and method for manufacturing...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Details

C430S311000, C430S394000

Reexamination Certificate

active

07846620

ABSTRACT:
The phase shift mask according to the present invention is a phase shift mask for manufacturing a semiconductor device. The phase shift mask includes a light-blocking portion, a light-transmitting portion, a phase shift portion, and an auxiliary pattern portion, the light-blocking portion, the light-transmitting portion, the phase shift portion, and the auxiliary pattern portion being concentrically arranged, wherein a width of the auxiliary pattern portion in a radius direction is less than a width of the light-transmitting portion and a width of the phase shift portion in a radius direction. Furthermore, it is possible that a phase of exposure light which passes through an auxiliary pattern portion is opposite to a phase of exposure light which passes through a light-transmitting portion or a phase shift portion, the light-transmitting portion or the phase shift portion being the closest to the auxiliary pattern portion.

REFERENCES:
patent: 6107000 (2000-08-01), Lee et al.
patent: 2004/0081899 (2004-04-01), Misaka
patent: 2005/0053844 (2005-03-01), Wu
patent: 2006/0183035 (2006-08-01), Misaka
patent: 2006/0192147 (2006-08-01), Kandaka et al.
patent: 2006/0284052 (2006-12-01), Toshikiyo et al.
patent: 2006/0285228 (2006-12-01), Ishii et al.
patent: 2007/0146531 (2007-06-01), Toshikiyo
patent: 2007/0164329 (2007-07-01), Toshikiyo
patent: 1696249 (2006-08-01), None
patent: 1736803 (2006-12-01), None
patent: 2001196568 (2001-07-01), None
patent: 2004117689 (2004-04-01), None
patent: 2006351972 (2006-12-01), None
patent: 2005059607 (2005-06-01), None
patent: 2005101067 (2005-10-01), None
English language Abstract of JP 2006-351972.
English language Abstract of JP 2004-117689.
English language Abstract of JP 2001-196568.

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