Radiation image detector

Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system

Reexamination Certificate

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Details

C250S370080, C250S370090, C250S370110, C257S053000, C257S428000, C257S429000, C257S444000

Reexamination Certificate

active

07834324

ABSTRACT:
An intermediate layer is located between a recording photoconductive layer and an electrode, which is either one of a bias electrode and a reference electrode, and which is located on the side at positive electric potential with respect to a charge accumulating section at the time of readout of electric charges of the charge accumulating section. The intermediate layer is an a-Se layer containing, as a specific substance, at least one kind of substance selected from the group consisting of an alkali metal fluoride, an alkaline earth metal fluoride, an alkali metal oxide, an alkaline earth metal oxide, SiOx, and GeOx, where x represents a number satisfying 0.5≦x≦1.5, in a concentration falling within the range of 0.003 mol % to 0.03 mol %.

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patent: 3774492 (2006-02-01), None

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