Electric lamp and discharge devices – Photosensitive – Photomultiplier
Reexamination Certificate
2007-06-07
2010-02-23
Macchiarolo, Peter J (Department: 2879)
Electric lamp and discharge devices
Photosensitive
Photomultiplier
C313S523000
Reexamination Certificate
active
07667400
ABSTRACT:
Back-illuminated silicon photomultipliers having a substrate of a first conductivity type having front and back sides, a matrix of regions of a second conductivity type in the substrate, a matrix of regions of the first conductivity type under the matrix of regions of the second conductivity type and adjacent the back side of the substrate, with the bottom of the matrix of regions of the second conductivity type forming a p
junction with the substrate or a matrix of regions of the second conductivity type, the matrix of regions of the first conductivity type having a higher conductivity than the substrate, a common anode formed by a uniform layer of the first conductivity type of higher conductivity than the substrate on the back side of the substrate. Preferably a plurality of trenches filed with an opaque material are provided in the back side of the substrate, the substrate preferably having a thickness of less than approximately 150 um.
REFERENCES:
patent: 5146296 (1992-09-01), Huth
patent: 5596186 (1997-01-01), Kobayashi
patent: 6541836 (2003-04-01), Iwanczyk et al.
patent: 6762473 (2004-07-01), Goushcha et al.
A. G. Chynoweth et al., “Photon Emission from Avalanche Breakdown in Silicon”, Physical Review, Apr. 15, 1956, pp. 369-376, vol. 102, No. 2.
A. G. Chynoweth et al., “Internal Field Emission in Silicon p-n Junctions”, Physical Review, May 1, 1957, pp. 418-426, vol. 106, No. 3.
A. G. Chynoweth et al., “Light Emission and Noise Studies of Individual Microplasmas in Silicon p-n Junctions”, Journal of Applied Physics, Nov. 1959, pp. 1811-1813, vol. 30, No. 11.
Jeff Bude et al., “Hot-carrier luminescence in Si”, Physical Review B, Mar. 15, 1992, pp. 5848-5856, vol. 45, No. 11.
A. Lacaita et al., “Photon-assisted avalanche spreading in reach-through photodiodes”, Applied Physics Letters, Feb. 8, 1993, pp. 606-608, vol. 62, No. 6.
Andrea L. Lacaita et al., “On the Bremsstrahlung Origin of Hot-Carrier-Induced Photons in Silicon Devices”, IEEE Transactions on Electron Devices, Mar. 1993, pp. 577-582, vol. 40, No. 3.
S. Villa et al., “Photon emission from hot electrons in silicon”, Physical Review B, Oct. 15, 1995, pp. 10 993-10 999, vol. 52, No. 15.
V. Saveliev et al., “Silicon avalanche photodiodes on the base of metal-resistor-semiconductor (MRS) structures”, Nuclear Instruments and Methods in Physical Research A, 2000, pp. 223-229, No. 442.
P. Buzhan et al., “An Advanced Study of Silicon Photomultiplier”, ICFA Instrumentation Bulletin, 2001, 14 unnumbered pages.
P. Buzhan et al., “Silicon photomultiplier and its possible applications”, Nuclear Instruments and Methods in Physics Research A, 2003, pp. 48-52, No. 504.
Valeri Saveliev, “The recent development and study of silicon photomultiplier”, Nuclear Instruments and Methods in Physics Research A, 2004, pp. 528-532, No. 535.
V. Golovin et al., “Novel type of avalanche photodetector with Geiger mode operation”, Nuclear Instruments and Methods in Physics Research A, 2004, pp. 560-564, No. 518.
V.D. Kovaltchouk et al., “Comparison of a silicon multiplier to a traditional vacuum photomultiplier”, Nuclear Instruments and Methods in Physics Research A, 2005, pp. 408-415, No. 538.
A. N. Otte et al., “Status of Silicon Photomultiplier Developments as optical Sensors for MAGIC/EUSO-like Detectors”, 29th International Cosmic Ray Conference Pune, 2005, pp. 1-4.
Deborah J. Herbert et al., “First Results of Scintillator Readout With Silicon Photomultiplier”, IEEE Transactions on Nuclear Science, Feb. 2006, pp. 389-394, vol. 53, No. 1.
N. Otte et al., “The Potential of SiPM as Photon Detector in Astroparticle Physics Experiments liek MAGIC and EUSO”, Nuclear Physics B Proceedings Supplements, 2006, pp. 144-149, No. 150.
Array Optronix, Inc.
Blakely , Sokoloff, Taylor & Zafman LLP
Macchiarolo Peter J
Zimmerman Glenn
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