Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1994-11-16
1996-09-17
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257510, H01L 2900
Patent
active
055571344
ABSTRACT:
A dielectric isolated type semiconductor device which can achieve a reduction in crystalline defects by means of a simple production process is provided. High-concentration regions are formed as active regions on a surface portion of an islandish semiconductor region which is isolated from an adjacent semiconductor region by means of an isolation trench. According to a first aspect of the present invention, an N type crystalline defect suppression region doped at a high concentration and deeper than the high-concentration regions is formed over the entire surface of an adjacent semiconductor region. According to a second aspect of the present invention, a high-concentration N type crystalline defect suppression region is provided on a surface portion of a P type high-concentration region is formed with identical structure and by an identical production process. By means of these N type regions, crystalline defects are reduced.
REFERENCES:
patent: 4814852 (1989-03-01), Sundstrom
patent: 5322683 (1994-07-01), Miyashita et al.
patent: 5332920 (1994-07-01), Nakagawa et al.
patent: 5449946 (1995-09-01), Sakakibara et al.
IBM Tech Bul, vol. 28 #6, Nov. 1985, pp. 2335-2336.
Okonogi et al, Extended Abstracts (The 41st Spring Meeting, 1994); The Japan Society Of Applied Physics And Related Societies, Mar. 28, 1994, 29p-ZL-14.
"A Bonded Wafer Bipolar Process In Manufacturing" C. J. McLachlan et al, pp. 43-54 Harris Semiconductor .COPYRGT.1993.
"Analog CMOS Circuits On Thick Film SOI" Kevin Yallup Analog Devices BV, Raheen Industrial Estate, Limerick, Ireland, pp. 117-128 .COPYRGT.1993.
"Application Of 150 mm Bonded Wafer Technology To A Power Asic Process" G. V. Rouse et al Harris Semiconductor, pp. 283-292 .COPYRGT.1993.
Iida Makio
Miura Shoji
Sakakibara Toshio
Sugisaka Takayuki
Meier Stephen
Nippondenso Co. Ltd.
LandOfFree
Dielectric isolated type semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Dielectric isolated type semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dielectric isolated type semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-415204