Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – On insulating substrate or layer
Reexamination Certificate
2006-09-12
2010-11-16
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
On insulating substrate or layer
C438S057000, C438S097000, C438S197000, C257SE21320, C257SE21051, C257SE21134, C257SE21347, C257SE21475
Reexamination Certificate
active
07833871
ABSTRACT:
A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.
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Kawaguchi Norihito
Kawakami Ryusuke
Masaki Miyuki
Nishida Kenichirou
Yoshinouchi Atsushi
Fish & Richardson P.C.
Nhu David
Semiconductor Energy Laboratory Co,. Ltd.
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