Wafer laser processing method

Semiconductor device manufacturing: process – Semiconductor substrate dicing – By electromagnetic irradiation

Reexamination Certificate

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C257SE21347

Reexamination Certificate

active

07544590

ABSTRACT:
A method of carrying out laser processing on a wafer having a plurality of parallel streets on the front surface along the streets, comprising the steps of:carrying out a first laser processing step of carrying out laser processing along streets formed in one half area of the wafer by carrying out a laser beam application step for applying a laser beam along the streets by positioning the outermost street on one side in the indexing-feed direction of the wafer right below a condenser and an indexing-feed step for positioning a street adjacent to the street which has undergone the laser beam application step on the wafer right below the condenser sequentially; andcarrying out a second laser processing step of carrying out laser processing along streets formed in the other half area of the wafer by carrying out a laser beam application step for applying a laser beam along the streets by positioning the outermost street on the other side in the indexing-feed direction of the wafer which has undergone the first laser processing step right below the condenser and an indexing-feed step for positioning a street adjacent to the street which has undergone the laser beam application step on the wafer right below the condenser sequentially.

REFERENCES:
patent: 6257224 (2001-07-01), Yoshino et al.
patent: 6555447 (2003-04-01), Weishauss et al.
patent: 10-305420 (1998-11-01), None
patent: 3408805 (2003-03-01), None

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