Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2006-10-17
2009-06-09
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S077000, C438S093000, C257S428000, C257S431000
Reexamination Certificate
active
07544532
ABSTRACT:
InSb infrared photodiodes and sensor arrays with improved passivation layers and methods for making same are disclosed. In the method, a passivation layer of AlInSb is deposited on an n-type InSb substrate using molecular beam epitaxy before photodiode detector regions are formed in the n-type substrate. Then, a suitable P+ dopant is implanted directly through the AlInSb passivation layer to form photodiode detector regions. Next, the AlInSb passivation layer is selectively removed, exposing first regions of the InSb substrate, and gate contacts are formed in the first regions of the InSb substrate. Then, additional portions of the AlInSb passivation layer are selectively removed above the photodiode detectors exposing second regions. Next, metal contacts are formed in the second regions, and bump contacts are formed atop the metal contacts. Then, an antireflection coating is applied to a side of the substrate opposite from the side having the metal and bump contacts. Forming the AlInSb passivation layer before the photodiode detector regions reduces the number of defects created in the n-type InSb substrate during fabrication in comparison to conventional methods and improves the noise performance of InSb photodiodes and sensor arrays incorporating the improved passivation layer.
REFERENCES:
patent: 4696094 (1987-09-01), Yves et al.
patent: 4935384 (1990-06-01), Wanlas
patent: 5296384 (1994-03-01), Cockrum et al.
patent: 5401986 (1995-03-01), Cockrum et al.
patent: 5646437 (1997-07-01), Kasai et al.
patent: 6274882 (2001-08-01), Verie et al.
patent: 6548878 (2003-04-01), Nauleau et al.
patent: 2003/0070707 (2003-04-01), King
patent: 198 38 430 (2000-03-01), None
patent: 2 647 595 (1990-11-01), None
Rehm, R. et al, Passivation of InAs/(GaIn)Sb short-period super lattice photodiodes . . . , App Phys Ltrs, AIP, Amer Inst Phys, Apr. 18, 2005, vol. 86, No. 17, p. 173501.
Su, Y.K. et al, Origins of 1/f noic4e in indium antimonide photodiodes . . . , Journal of Appl Phys, Amer Inst of Phys, Jan. 15, 1997, vol. 81, No. 2, p. 739.
Desalvo, G. et al, A New Technique for Testing Surface Passivation Techniques . . . , Proceed of SPIE, WA, Sep. 6, 1988, vol. 992, pp. 336-343.
Mauk, M.G. et al, Study of Novel Chemicalo Surface Passivation Techniques . . . , Appl Phys Letters, AIP, Amer Inst of Phys, Jan. 16, 1989, vol. 54, No. 3, pp. 213-215.
Khaleque, F., Metal-insulator-semiconductor structures of InSb . . . , Letters, IEE Stevenage, GB, vol. 31, No. 6, pp. 500-502, Mar. 16, 1995.
Childs Alexander C.
Gerber Kenneth A.
Ginn Robert P.
Hampp Andreas
Alkov Leonard A.
Picardat Kevin M
Raytheon Company
LandOfFree
Infrared photodiodes and sensor arrays with improved... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Infrared photodiodes and sensor arrays with improved..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Infrared photodiodes and sensor arrays with improved... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4146514