Semiconductor device

Details Semiconductor device Semiconductor device

2008-03-03

2009-06-09

Clark, Jasmine J (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

With shielding

C257S422000, C257S629000, C257S630000, C257SE23114

Reexamination Certificate

active

07545025

ABSTRACT:
Disclosed is a semiconductor device which includes a semiconductor chip and a base substrate. The semiconductor chip includes a semiconductor substrate, an interconnect layer and a high-frequency interconnect. The interconnect layer is provided on the substrate. The high-frequency interconnect is formed within the interconnect layer. The semiconductor chip is mounted onto the base substrate. An electromagnetic shield layer is provided between the high-frequency interconnect and the interconnect.

REFERENCES:
patent: 6944025 (2005-09-01), Hockanson et al.
patent: 7045881 (2006-05-01), Hagen et al.
patent: 7233055 (2007-06-01), Grange
patent: 7405477 (2008-07-01), Tao et al.
patent: 02-702660 (1990-03-01), None
patent: 2002-198490 (2002-07-01), None
patent: 2004-095777 (2004-03-01), None
patent: 2006-059959 (2006-03-01), None
Ali Hajimiri et al., “Design Issues in CMOS Differential LC Oscillators”, IEEE Journal of Solid-State Circuits, vol. 34, No. 5, May 1999, pp. 717-724.

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