Substrate processing apparatus and substrate processing method

Semiconductor device manufacturing: process – Chemical etching

Reexamination Certificate

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Reexamination Certificate

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07541285

ABSTRACT:
A substrate processing apparatus performs a chemical solution process in a chemical solution process room that is partially formed within a chamber. During the chemical solution process, the substrate processing apparatus seals the chemical solution process room, and measures the pressure within the chemical solution process room, and controls the pressure within the chemical solution process room, based on a measured value. Irrespective of location environment of the substrate processing apparatus, the chemical solution process room can be controlled to a predetermined pressure. The substrate processing apparatus also permits efficient pressure control with respect to a minimum required amount of region.

REFERENCES:
patent: 6164297 (2000-12-01), Kamikawa
patent: 6375758 (2002-04-01), Nakashima et al.
patent: 2001/0051439 (2001-12-01), Khan et al.
patent: 2003/0045098 (2003-03-01), Verhaverbeke et al.
patent: 1068936 (2001-01-01), None
patent: 11-8217 (1999-01-01), None
patent: 11-8218 (1999-01-01), None
patent: 2927806 (1999-05-01), None
patent: 2001-102349 (2001-04-01), None
patent: 2004-063513 (2004-02-01), None
Office Action issued by the Korean Patent Office on Jul. 20, 2007 in connection with corresponding Korean Patent Application No. 10-2006-0078142.
Translation of the Office Action issued by the Korean Patent Office on Jul. 20, 2007 in connection with corresponding Korean Patent Application No. 10-2006-0078142.
**U.S. patent 6,375,758 corresponds to JP 11-8218—Additionally, a brief description is provided in English by applicant.
*U.S. patent 6,164,297 corresponds to JP 11-8217—Additionally, a brief description is provided in English by applicant.

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