Solid-state image sensing device having photoreceptive element

Details Solid-state image sensing device having photoreceptive element Solid-state image sensing device having photoreceptive element

2004-11-30

2009-06-16

Tran, Sinh N (Department: 2622)

Television

Camera, system and detail

Optics

C348S348000

Reexamination Certificate

active

07548268

ABSTRACT:
A solid-state image sensing device has a photoreceptive element for storing an information charge generated in response to an incident light and a charge-retaining element for retaining the information charge as it is, adjacently arranged on the surface of a semiconductor substrate, wherein the photoreceptive element and the charge-retaining element can bidirectionally transfer the information charge according to a transfer clock signal.

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Excerpts from “Basics and Applications of CCD/CMOS Image Sensors,” written by Kazuya Yonemoto, 1st edition, published Aug. 10, 2003.
Office Action for Taiwanese Appl. No. 093137003 mailed on Aug. 30, 2005, 3 pages.
English language Translation of Excerpts from Office Action for Taiwanese Appl. No. 093137003, mailed Aug. 30, 2005, 2 pages.
English Patent Abstract of JP10020036 from esp@cenet, published Jan. 23, 1998, 1 page.
Chinese Office Action for Chinese Application No. 200410095087.1, Issued on Jul. 20, 2007 (7 pages).

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