Device manufacturing method and computer program product

Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement

Reexamination Certificate

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C430S312000, C430S328000

Reexamination Certificate

active

07547495

ABSTRACT:
In a double exposure process to print features at a reduced pitch, the critical dimension of features printed in the first exposure is measured and used as a target for the second exposure.

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European Search Report issued for European Patent Application No. 0625678.6—2222, dated Apr. 11, 2007.
Ebihara et al., “Beyond K1=0.25 Lithography: 70nm L/S Patterning Using KrF Scanners,” Proceedings of SPIE, vol. 5256, 2003, pp. 985-994.
Dusa et al., “Prospects and Initial Exploratory Results for Double Exposure/Double Pitch Technique,” IEEE International Symposium on Semiconductor Manufacturing, San Jose, CA , USA, Sep. 13-15, 2005, pp. 177-180.

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