Isoelectronic surfactant suppression of threading...

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

Reexamination Certificate

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C136S256000, C136S262000

Reexamination Certificate

active

07626116

ABSTRACT:
A method of reducing propagation of threading dislocations into active areas of an optoelectronic device having a III-V material system includes growing a metamorphic buffer region in the presence of an isoelectronic surfactant. A first buffer layer may be lattice matched to an adjacent substrate and a second buffer layer may be lattice matched to device layers disposed upon the second buffer layer. Moreover, multiple metamorphic buffer layers fabricated in this manner may be used in a single given device allowing multiple layers to have their band gaps and lattice constants independently selected from those of the rest of the device.

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