Semiconductor integrated circuit device of high degree of integr

Details Semiconductor integrated circuit device of high degree of integr Semiconductor integrated circuit device of high degree of integr

1986-03-03

1987-10-13

James, Andrew J.

357 2311, 357 42, 357 44, 357 90, 357 50, 357 48, 357 49, H01L 2702

Patent

active

047002123

ABSTRACT:
The present invention relates to a semiconductor integrated circuit device of high degree of integration. A first element region and a second element region are provided with a field insulating film interposed therebetween on a semiconductor substrate of one conductivity type. Impurity regions of one conductivity type having a high impurity concentration are separately formed in the substrate at locations of the first and second element regions, respectively. The respective impurity regions are wider that the respective element regions, and extends under end portions of the field insulating film but not under the center portion thereof. A wiring layer is provided on the center portion of the field insulating film beneath which no impurity region exists. The element regions are isolated from each other by a predetermined threshold voltage determined by the end portions of the field insulating film and by the underlying high impurity regions. Further, parasitic capacity can be reduced between the wiring layer and the semiconductor substrate since no impurity region having high concentration exists under the wiring layer.

REFERENCES:
patent: 3920481 (1975-11-01), Hu
patent: 3946419 (1976-03-01), DeWitt et al.
patent: 3974516 (1976-08-01), Steinmaier
patent: 4016594 (1977-04-01), Shappir
patent: 4027380 (1977-06-01), Deal et al.
patent: 4205330 (1980-05-01), Klein
patent: 4261772 (1981-04-01), Lane
patent: 4378565 (1983-03-01), Ghezzo et al.
patent: 4385947 (1983-05-01), Halfacre
patent: 4470852 (1984-09-01), Eusworth
patent: 4477310 (1984-10-01), Park et al.
patent: 4487639 (1984-12-01), Lam et al.
patent: 4488162 (1984-12-01), Jambotkar
patent: 4493740 (1985-01-01), Komeba
patent: 4506437 (1985-03-01), Godejahn, Jr.
patent: 4520552 (1985-06-01), Arnould et al.
patent: 4523369 (1985-06-01), Nagakubo

Affiliated with

Also associated with

Rating

Semiconductor integrated circuit device of high degree of integr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit device of high degree of integr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device of high degree of integr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-414273