Device performance improvement using flowfill as material...

Details Device performance improvement using flowfill as material... Device performance improvement using flowfill as material...

2007-06-21

2009-11-10

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S374000, C257SE29018

Reexamination Certificate

active

07615840

ABSTRACT:
A trench is formed in the surface of a provided semiconductor body. An oxide is deposited in the trench and a cap is deposited on the oxide, wherein the combination of the cap and the oxide impart a mechanical stress on the semiconductor body.

REFERENCES:
patent: 7470973 (2008-12-01), Takao
patent: 2007/0096223 (2007-05-01), Chidambarrao et al.
patent: 2007/0132054 (2007-06-01), Arghavani et al.
patent: 2007/0181966 (2007-08-01), Watatani et al.
patent: 2007/0228488 (2007-10-01), Kishii et al.
patent: 2008/0150037 (2008-06-01), Teo et al.

Affiliated with

Also associated with

Rating

Device performance improvement using flowfill as material... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Device performance improvement using flowfill as material..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device performance improvement using flowfill as material... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4142732