Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-11-30
2009-11-17
Luu, Chuong A. (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S053000, C257S085000, C257S183000, C257S194000
Reexamination Certificate
active
07619240
ABSTRACT:
This semiconductor photodetector consists of a diode with at least two heterojunctions comprising two external layers, a first layer with a given kind or type of doping and a second layer with a kind or type of doping opposite to that of the first layer, the bandgap width of these two layers being determined as a function of the energy and hence the wavelength or wavelength band that they are each intended to detect, these two layers being separated from each other by an intermediate layer having the same kind or type of doping as one of said first and second layers, said diode being subjected to a bias voltage of adjustable value between the two external layers. The bandgap width of the intermediate layer is greater than that of the layer that has the same type of doping as layer.
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Burr & Brown
Commissariat a l''Energie Atomique
Luu Chuong A.
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