Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2006-09-29

2009-06-23

Menz, Laura M (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Bump leads

C257S779000

Reexamination Certificate

active

07550844

ABSTRACT:
A semiconductor device and manufacturing method thereof improving moisture resistance of a FeRAM. After a probe test using a pad, a metal film is formed to cover the pad in an opening of a protective film and a region from the pad to an opening outer periphery of the protective film. On the metal film, a metal bump is formed. The metal film is formed to have a two-layer structure of the first and second metal films. Materials of the lower and upper layers are selected mainly in consideration of adhesion to the protective film and adhesion to the metal bump, respectively. Film formation conditions thereof are set to provide metal films with a desired quality and thickness. Thus, penetration of moisture from the pad or the periphery into a ferroelectric capacitor can be prevented and therefore, occurrence of potential inversion abnormalities due to penetrated moisture can be effectively suppressed.

REFERENCES:
patent: 5196726 (1993-03-01), Nishiguchi et al.
patent: 5903058 (1999-05-01), Akram
patent: 6172422 (2001-01-01), Chigawa et al.
patent: 6303880 (2001-10-01), Asai et al.
patent: 6455408 (2002-09-01), Hwang et al.
patent: 6472729 (2002-10-01), Oka
patent: 6509643 (2003-01-01), Ohtaka et al.
patent: 6566239 (2003-05-01), Makino et al.
patent: 2002/0017716 (2002-02-01), Ohtaka et al.
patent: 2002/0076909 (2002-06-01), Matsuki et al.
patent: 2004/0245621 (2004-12-01), Hanaoka et al.
patent: 2005/0186771 (2005-08-01), Tanida et al.
patent: 2005/0224970 (2005-10-01), Matsuki et al.
patent: 2006/0076679 (2006-04-01), Batchelor et al.
patent: 2007/0015351 (2007-01-01), Tomimori et al.
patent: 2007/0228561 (2007-10-01), Matsuki et al.
patent: 2005-268617 (2005-09-01), None
patent: 2005268617 (2005-09-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4141497