Semiconductor devices and methods for manufacturing the same

Details Semiconductor devices and methods for manufacturing the same Semiconductor devices and methods for manufacturing the same

2008-07-23

2009-10-20

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S759000, C257S760000, C257S762000, C257SE21579

Reexamination Certificate

active

07605471

ABSTRACT:
Semiconductor devices having a copper line layer and methods for manufacturing the same are disclosed. An illustrated semiconductor device comprises a damascene insulating layer having a contact hole, a barrier metal layer including a first ruthenium layer, a ruthenium oxide layer and a second ruthenium layer, a seed copper layer formed on the barrier metal layer, and a copper line layer made of a Cu—Ag—Au solid solution. A disclosed example method of manufacturing a semiconductor device reduces and/or prevents contact characteristic degradation of the barrier metal layer with the silicon substrate or the damascene insulating layer. In addition, by forming the copper line layer made of the Cu—Ag—Au solid solution, long term device reliability may be improved.

REFERENCES:
patent: 6605874 (2003-08-01), Leu et al.
patent: 6696758 (2004-02-01), Dubin et al.
patent: 6713373 (2004-03-01), Omstead
patent: 6815339 (2004-11-01), Choi
patent: 6849541 (2005-02-01), Hu et al.
patent: 6958542 (2005-10-01), Hasunuma et al.
patent: 6972491 (2005-12-01), Yamada et al.
patent: 7105928 (2006-09-01), Yu et al.
patent: 7285308 (2007-10-01), Hendrix et al.
patent: 2001/0026963 (2001-10-01), Itatani et al.
patent: 2003/0019760 (2003-01-01), Hardee et al.
patent: 2004/0235241 (2004-11-01), Anma et al.
patent: 2005/0206000 (2005-09-01), Aggarwal et al.
patent: 2006/0063379 (2006-03-01), Dory et al.
patent: 2007/0257369 (2007-11-01), Huang
patent: 2007/0298608 (2007-12-01), Johnston et al.
patent: 1020030025494 (2003-03-01), None
patent: 1020030050059 (2003-06-01), None
Kim, Hui Jin, Method for Fabricating Copper Interconnection of Semiconductor Device, English Abstract of Korean Patent Publication 1020030050059, Jun. 25, 2003, Korean Intellectual Property Office, Republic of Korea.
Choi, Gil Hyeon et al., Semiconductor Device Including Contact Between Ruthenium Layer and Metal Layer and Fabricating Method Thereof, English Abstract of Korean Patent Publication 1020030025494, Mar. 29, 2003, Korean Intellectual Property Office, Republic of Korea.

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