Method for manufacturing device isolation film of...

Details Method for manufacturing device isolation film of... Method for manufacturing device isolation film of...

2008-02-15

2009-10-13

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S426000, C438S427000

Reexamination Certificate

active

07601609

ABSTRACT:
A method for manufacturing device isolation film of semiconductor device is disclosed. The method utilizes a plasma oxidation of a liner nitride film exposed by etching a liner oxide the film in peripheral region prior to the formation of device isolation film to prevent the generation of a electron trap which causes trapping of electrons at the interface of the oxide film and the nitride film resulting in a HEIP phenomenon.

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