Ultraviolet sensor

Details Ultraviolet sensor Ultraviolet sensor

2008-10-24

2009-12-22

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S464000, C257S613000, C257SE31093, C257SE31124

Reexamination Certificate

active

07635906

ABSTRACT:
The ultraviolet sensor has a ZnO layer composed of an oxide semiconductor including ZnO; a (Ni,Zn)O layer which is provided in contact with the ZnO layer and which is composed of an oxide semiconductor including NiO and ZnO solid-solved therein; a first terminal electrode electrically connected to the ZnO layer, and a second terminal electrode electrically connected to the (Ni,Zn)O layer. The ZnO layer is disposed at an ultraviolet ray receiving side. The (Ni,Zn)O layer is preferably formed of a sintered body.

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PCT/JP2006/318131 dated Oct. 24, 2006 International Search Report.
PCT/JP2006/318131 dated Oct. 24, 2006 Written Opinion.

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