Light-emitting device

Details Light-emitting device Light-emitting device

2006-02-28

2009-02-17

Jackson, Jr., Jerome (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S013000, C257SE27120, C438S022000

Reexamination Certificate

active

07491974

ABSTRACT:
A light-emitting device is equipped with a GaN substrate; an n-type AlxGa1-xN layer on a first main surface side of the GaN substrate; a p-type AlxGa1-xN layer positioned further away from the GaN substrate than the n-type AlxGa1-xN layer; and a multi-quantum well (MQW) positioned between the n-type AlxGa1-xN layer and the p-type AlxGa1-xN layer. In the light-emitting device, the p-type AlxGa1-xN layer side is down-mounted and light is emitted from a second main surface, which is the main surface opposite from the first main surface of the GaN substrate. The second main surface of the GaN substrate includes a region on which cavities and projections are formed. Also, the light-emitting device includes an n-electrode formed on the second main surface of the GaN substrate1and a protective film formed to cover the side wall of the n-electrode.

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