Method for the production of a bipolar transistor comprising...

Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of...

Reexamination Certificate

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C438S345000, C257SE21379, C257SE29044

Reexamination Certificate

active

07618871

ABSTRACT:
For the production of an improved bipolar transistor comprising a low-resistance base terminal, a dielectric layer is deposited over the semiconductor substrate and is highly doped via an implantation mask. In a subsequent controlled thermal step, the dopant is then indiffused into the semiconductor substrate from the dielectric layer serving as a dopant repository. This gives rise to a low-resistance region with which the extrinsic base can be defined carefully.

REFERENCES:
patent: 3886569 (1975-05-01), Basi et al.
patent: 6028345 (2000-02-01), Johnson
patent: 6239477 (2001-05-01), Johnson
patent: 6248650 (2001-06-01), Johnson
patent: 6440810 (2002-08-01), Johansson et al.
patent: 6686250 (2004-02-01), Kalnitsky et al.
patent: 7390721 (2008-06-01), Geiss et al.
patent: 2001/0012655 (2001-08-01), Nordstom et al.
patent: 2002/0003286 (2002-01-01), Marty et al.
patent: 2002/0132435 (2002-09-01), Zampardi et al.
patent: 2004/0043576 (2004-03-01), Shideler et al.
patent: 2006/0060941 (2006-03-01), Sun et al.
patent: 198 40 866 (2000-03-01), None
patent: 0 219 243 (1987-04-01), None
patent: 219243 (1987-04-01), None
patent: 0 430 274 (1990-11-01), None
patent: 03265131 (1991-11-01), None
patent: 05110079 (1993-04-01), None
patent: WO 00/13206 (2000-03-01), None
patent: WO 2005098926 (2005-10-01), None
Kravetsky et al., “A study of ion-implanted Si(111) and Si(111)/silicon oxide by optical second harmonic generation”, Surface Science, vol. 402-404, No. 15, pp. 542-546, May 15, 1998.
Böck, J. et al., “SiGe Bipolar Technology for Mixed Digital and Analogue R Applications”, IEEE 2000, pp. 32.3.1-32.3.4.
Baudry, H. et al., “High performance O.25μm SiGe and SiGe:C HBTs using non selective epitaxy”, IEEE BCTM 3.1, 2001, pp. 52-55.
Johnson, F.S. et al., “A Highly Manufacturable 0.25μm RF Technology Utilizing a Unique SiGe Integration”, IEEE BCTM 3.2, 2001, pp. 56-59.
Richey, D.M. et al., “Scaling Issues and Ge Profile Optimization in Advanced UHV/CVD SiGe HBTs”, IEEE BCTM 1.2, 1996, pp. 19-22.
Böck, J. et al., “SiGe Bipolar Technology for Mixed Digital and Analogue RF Applications”, IEEE 2000, pp. 32.3.1-32.3.4.
Baudry, H. et al., “High performance 0.25 μm SiGe and SiGe:C HBTs using non selective epitaxy”, IEEE BCTM 3.1, 2001, pp. 52-55.
Johnson, F.S. et al., “A Highly Manufacturable 0.25 μm RF Technology Utilizing a Unique SiGe Integration”, IEEE BCTM 3.2, 2001, pp. 56-59.
Richey, D.M. et al., “Scaling Issues and Ge Profile Optimization in Advanced UHV/CVD SiGe HBTs”, IEEE BCTM 1.2, 1996, pp. 19-22.

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